发明名称 METHOD FOR EMBODYING AN ELECTRIC CIRCUIT ON AN ACTIVE ELEMENT OF AN MIS INTEGRATED CIRCUIT
摘要 A method of making an electric contact of an MIS integrated circuit includes the following stages: depositing a thick film made of one first electric nonconductor on the integrated circuit provided with this element; depositing on the first nonconductor film a crash or barrier film made of a highly resistive material or a nonconductor able to be etched selectively with respect to the first nonconductor and a second electric nonconductor; forming opposite the active element a first opening in the barrier film and fixing the dimensions at the level of the active element of the electric contact to be embodied; depositing on the resulting structure obtained at least one second nonconducting film forming a second opening in the second nonconducting film, the second opening having a width larger than that the first opening; etching of the first nonconductor exposed during the previous step by using the etched barrier film as a mask, thus forming an electric contact hole of the active element, and metallizing of this contact hole.
申请公布号 US5246882(A) 申请公布日期 1993.09.21
申请号 US19910722120 申请日期 1991.06.27
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 HARTMANN, JOEL
分类号 H01L21/28;H01L21/3205;H01L21/768;H01L21/8234;H01L23/485;H01L23/52;H01L23/522;H01L27/088 主分类号 H01L21/28
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