发明名称 |
METHOD FOR EMBODYING AN ELECTRIC CIRCUIT ON AN ACTIVE ELEMENT OF AN MIS INTEGRATED CIRCUIT |
摘要 |
A method of making an electric contact of an MIS integrated circuit includes the following stages: depositing a thick film made of one first electric nonconductor on the integrated circuit provided with this element; depositing on the first nonconductor film a crash or barrier film made of a highly resistive material or a nonconductor able to be etched selectively with respect to the first nonconductor and a second electric nonconductor; forming opposite the active element a first opening in the barrier film and fixing the dimensions at the level of the active element of the electric contact to be embodied; depositing on the resulting structure obtained at least one second nonconducting film forming a second opening in the second nonconducting film, the second opening having a width larger than that the first opening; etching of the first nonconductor exposed during the previous step by using the etched barrier film as a mask, thus forming an electric contact hole of the active element, and metallizing of this contact hole.
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申请公布号 |
US5246882(A) |
申请公布日期 |
1993.09.21 |
申请号 |
US19910722120 |
申请日期 |
1991.06.27 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
HARTMANN, JOEL |
分类号 |
H01L21/28;H01L21/3205;H01L21/768;H01L21/8234;H01L23/485;H01L23/52;H01L23/522;H01L27/088 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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