SEMICONDUCTOR STORAGE DEVICE

摘要

PURPOSE:To stabilize operation of a EPROM without damaging mass production and to improve reliability of a microcomputer or the like incorporating the EPROM by eliminating the effect of a non-selecting memory cell in the EPROM and preventing malfunction of writing and leakage of charged electric charge. CONSTITUTION:A diffusion layer which is a source region of memory cells MC constituting a memory array MARY is separated corresponding respectively to plural memory cells which are connected to the common bit line, and is shared by use by plural memory cells connected to the common word line as the common source region S0v-Sm. Simultaneously, inverters N0-Nm for switching selectively potentials of the source regions S0-Sm in accordance with potentials of corresponding word lines is provided between these diffusion layers and the corresponding word lines.