发明名称 PRODUCTION OF ALUMINUM NITRIDE SUBSTRATE
摘要 PURPOSE:To provide a process for the production of a ceramic circuit board for mounting silicon LSI element, etc., especially aluminum nitride substrate and suitable for the industrial mass-production of aluminum nitride substrate having high thermal conductivity without necessitating troublesome operations. CONSTITUTION:A compound of alkaline earth metal or rare earth metal is used as a sintering assistant. The 1st-stage baking is carried out in a non-carbon atmosphere essentially excluding the contact of the baking object with carbon and the 2nd-stage baking is carried out in a carbon atmosphere to ensure sufficient contact of the baking object with carbon.
申请公布号 JPH05238833(A) 申请公布日期 1993.09.17
申请号 JP19920039592 申请日期 1992.02.26
申请人 FUJITSU LTD 发明人 MAKIHARA HIROSHI;OISHI HITOSHI
分类号 C04B35/581;C04B35/58;C04B35/64 主分类号 C04B35/581
代理机构 代理人
主权项
地址