BIPOLAR DEVICE MANUFACTURING METHOD USING POLY-SILICON

摘要

The method for manufacturing the high speed bipolar device comprises steps: (a) isolating the device by using the trench to reduce the junction capacitance between the collector and substrate; (b) forming the active region of the device and the emitter polycrystal silicon; (c) forming the non-active base region; (d) removing the base polycrystal silicon formed on the emitter polycrystal silicon by using the dual photoresist; (e) oxidizing the exposed base polycrystal silicon; and (f) forming the electrode.