DEVICE SEPERATING METHOD OF SEMICONDUCTOR APPARATUS

摘要

The method prevents the channel stop ion expanded by the thermal oxidizing process to expand below to the silicon nitride layer so that much more channel stop ion than the case without the silicon nitride layer is collected between the element isolation region and the silicon substrate. Then the electrical isolation between two elements is performed exactly. For example, if the neighbouring NMOS transistors are formed on the substrate, the punch through voltage of the impurity diffusion layer is increased so that the element characteristic is improved.