| 摘要 |
A sensing circuit for a floating gate memory device (12) is disclosed. The sensing circuit has a first voltage amplifier (20) which generates a first output voltage, and a first current amplifier (22) which receives the first output voltage and generates a first output current in response thereto. The first voltage amplifier has a control transistor which generates a first output voltage in response to the memory device being in one state and a second output voltage in response to the memory device being in another state. The circuit also comprises a dummy cell (14), a second voltage amplifier (24) connected thereto for generating a second output voltage. A second current amplifier (26) receives the second output voltage and generates a second output current in response thereto. A comparator receives the first and second output currents, compares them, and generates an output indicative of the state of the memory device. |
