MANUFACTURING METHOD OF CMOS USING BOE

摘要

The CMOS using BOE (buried oxidation epitaxy) is parpared by forming a oxide film as mask for producing P+ and N+ buried layers on the substrate, implanting 1.0E14-1.0E15 ion and 35 kev - 20 kev energy to form the P+ buried layer, implanting at the same condition to form the N+ buried layer, depositing 1-5 m epitaxial layer on the all area of the substrate and driving in the implante ions to reath 0.3-0.5 m of the device-surface channel. The device has a high punch-through voltage and an improved latch-up and a good isolation.