REVERSED T-TYPE GATE FORMING METHOD USING POLY-SILICON OXIDATION PROCESS

摘要

The method is for forming the reverse T type gate electrode by the multi-crystal silicon oxidation layer growing method. The method includes: (1) the 1st processing for doping phosphorus and arsenic, and growing the field and gate oxidation layer in the manufacturing of MOSFET; (2) the 2nd processing for forming the gate pattern; (3) the 3rd processing for growing the high-temperature and pressure oxidation layer; (4) the 4th processing for forming n-region (8) or P-region (10) by ion injection; (5) the 5th processing for executing the fast-temperature processing; and (6) the 6th processing for the alloy processing.