| 摘要 |
An EPROM cell comprises an MOS device including a floating gate electrode (44, 64) overlying, and ohmically insulated from, the channel region (26) of the MOS device, and a separate diode (18) including a p-n junction (54) having a substrate surface intercept (30). A floating gate electrode (64) overlies the diode p-n junction intercept (54) and is ohmically isolated therefrom by an intervening insulating layer. Writing of data into the floating gate electrode of the MOS device is achieved by causing a voltage breakdown across the diode p-n junction (54) and the flow of high energy electrons across the junction. A voltage is simultaneously applied to the diode gate electrode (64) thereby attracting some of the high energy electrons through the overlying insulating layer into the diode floating gate electrode. The diode gate electrode (64) is ohmically connected to the MOS floating gate electrode (44) on which some of the electrons are stored for affecting the turn-on, turn-off, characteristics of the MOS device. |
