ELECTRIC INTERCONNECTION DEVICE BETWEEN POLYSILICON LAYERS

摘要

The method for connecting the upper and lower polycrystal silicon layers with the chemical process comprises steps: (a) forming the oxide layer after forming a 1st polycrystal silicon layer on the substrate or insulation layer; (b) forming a 2nd polycrystal silicon layer and coating the photoresist layer; (c) removing certain area of the photoresist layer and dipping it into the chemical solution; (d) forming the electrical passway on the oxide layer through the exposed 2nd polycrystal silicon layer; and (e) removing the photoresist layer.