| 摘要 |
The DRAM cell has the arger contact area by having self- aligned buried contact, is prepared by forming gate and side wall on a substrate, depositing nitride film, CVD oxide film in order, defining the buried contact photoresist, wet-etching CVD oxide film in 10 % HF solution, wet-etching nitride film in phosphoric acid solution to form the buried contact, forming a capacitor node, doping As ion, defining and dry-etching node, reforming polycrystalline silicon, RIE dry-etching the polycrystalline silicon to form side wall, forming dielectric film and polycrystalline silicon for plate continuously.
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