发明名称 |
HALBLEITERANORDNUNG MIT EINER LEITERSCHICHT UNTER DEM KONTAKTFLECK. |
摘要 |
In a semiconductor device wherein a bonding pad (22 or 23) is formed on an electrode (17-1 to 17-8, or 18-1 to 18-8) through an insulating interlayer (19) and a bonding wire (25 or 26) is bonded to the bonding pad (22 or 23) by thermocompression bonding, a through hole (21-1 to 21-4, or 20-1 to 20-3) for connecting the bonding pad (23 or 22) and the electrode (17-4 to 17-7, or 18-1 to 18-3) is formed in the insulating interlayer (19) above a contact hole (15-1 to 15-7, or 16-1 to 16-8) for connecting the electrode (17-1 to 17-8, or 18-1 to 18-8) and an active region (13-1 to 13-7, or 12) formed in a semiconductor substrate (11). Metal columns of members of the electrode (17-4 to 17-7, or 18-1 to 18-3) filled in the contact hole (15-4 to 15-7, or 16-1 to 16-3) and members of the bonding pad (23 or 22) filled in the through hole (20-1 to 20-3, or 21-1 to 21-4) are formed under the bonding pad (23 or 22). |
申请公布号 |
DE3880003(T2) |
申请公布日期 |
1993.09.16 |
申请号 |
DE19883880003T |
申请日期 |
1988.05.10 |
申请人 |
KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP |
发明人 |
MATSUMOTO, HIROSHI, MINATO-KU TOKYO 105, JP |
分类号 |
H01L21/31;H01L21/3205;H01L21/60;H01L21/603;H01L23/485;H01L23/52;H01L23/522 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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