发明名称 PHOTORESISTS HAVING A LOW LEVEL OF METAL IONS
摘要 <p>The present invention provides methods for producing photoresist compositions having a very low level of metal ions, utilizing specially treated ion exchange resins. A method is also provided for producing semiconductor devices using such photoresist compositions.</p>
申请公布号 WO1993018437(A1) 申请公布日期 1993.09.16
申请号 US1993001749 申请日期 1993.02.25
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