| 摘要 |
<p>A method to produce high quality doped and undoped lead zirconate titanate (PZT) thin films by metalorganic chemical vapor deposition. The PZT films which contains a perovskite structure were deposited on sapphire disks, Pt/Ti/SiO2/Si wafers, and RuOx/SiO2/Si wafers using hot-wall and cold-wall CVD reactors at a deposition temperature of 550 °C and a reduced pressure of 6 torr. Figure 1 shows a schematic of a hot-wall MOCVD apparatus which contains gaseous sources, a three-zone furnace, and a mechanical pump. The source materials include an oxidizing agent and metalorganic precursors such as metal alkoxides, metal acetylacetonates, or metal β-diketonates. The stoichiometry of the films can be easily controlled by varying the individual precursor temperature and/or the flow rate of the carrier gas. The Pb(Zr0.82Ti0.12)O3 film produced by the present invention shows a spontaneous polarization of 23.3 νC/cm2, a remanent polarization of 12.3 νC/cm2, and a coercive field of 64.5 kV/cm.</p> |
