发明名称 PROCESS FOR PRODUCING THIN FILMS OF INORGANIC OXIDES OF CONTROLLED STOICHIOMETRY
摘要 <p>An in-situ process for preparing thin films which contain volatile and relatively involatile oxides is disclosed, in particular, crystalline thin films of oxides of superconductors or precursors,wherein separate sources of the volatile and relatively involatile oxides during deposition of the thin film are employed.</p>
申请公布号 WO1993018200(A1) 申请公布日期 1993.09.16
申请号 US1993002162 申请日期 1993.03.10
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址