SEMICONDUCTOR PAKAGE AND MANUFACTURING METHOD THEREOF

摘要

The method is for forming the conductivity sheet between the pad (1a) of chip (1) and the inner (3) lead of a lead-frame. The method includes a bi-directional conductivity paste forming process for forming the conductivity paste around the pad (1a) of chip (1), the inner lead sticking process for sticking the inner lead (3) of the lead-frame to the paste (4), the curing process for hardening the contact area between the chip (1) and inner-lead (3), and the trimming/forming process. The 1st curing process temperature is 130 -170 deg.C and the 2nd curing process temperature is 230 -270deg.C.