发明名称 |
APPARATUS FOR AND METHOD OF PRODUCING SINGLE CRYSTAL SEMICONDUCTOR OF HIGH DISSOCIATION PRESSURE COMPOUND. |
摘要 |
An apparatus for and method of producing a single crystal of a high dissociation pressure compound such as GaAs. The producing apparatus comprises: an openable sealed vessel (20) housed in an outer vessel (78) and having a tubular portion, top plate portions (22A) for blocking opposite ends of the tubular portion and a bottom portion (42); vessel heating means (36, 38 and 40) for heating the sealed (20); and a steam pressure control section whose inner space communicates with an inner space of the sealed vessel (20). The steam pressure control section comprises: a steam pressure control vessel (98) obtained by defining an air-tight inner space S between a cylindrical inner wall portion (102) and a cylindrical outer wall portion (100), which are concentric with each other; a communicating means (96) for establishing communication between this steam pressure control vessel (98) and the sealed vessel (20); heat pipes (108, 112) disposed along at least one of the inner wall portion and the outer wall portion of the steam pressure control vessel (98); and control section heating means (110, 114), which are disposed inside the inner wall portion and outside the outer wall portion of the steam pressure control vessel (98), respectively. <IMAGE> |
申请公布号 |
EP0559921(A1) |
申请公布日期 |
1993.09.15 |
申请号 |
EP19930906300 |
申请日期 |
1991.11.12 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
SASSA, KOICHI, KAGOBUTSU HANDOTAI SENTA MITSUBISHI;ATAMI, TAKASHI KAGOBUTSU HANDOTAI SENTA MITSUBISHI;SHIRATA, KEIJI KAGOBUTSU HANDOTAI SENTA MITSUBISHI |
分类号 |
C30B15/00;C30B15/02 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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