| 摘要 |
<p>A metal-semiconductor field effect transistor device comprises an active layer (24a) formed on a surface of a semiconductor substrate (25), a first gate electrode (20a) provided on the active layer so as to make a direct contact therewith, source and drain electrodes (22a, 23a) provided on the active layer at both sides of the first gate electrode (20a) so as to make ohmic contact with the active layer, a second gate electrode (21a, 21b) provided on said active layer between the first gate electrode and the source electrode and between the first gate electrode and the drain electrode, a terminal (10) for applying an input signal to the first gate electrode, and means (32) for applying a constant voltage to the second gate electrode (21a, 21b) in order to inhibit the formation of depletion regions in the active layer. A protective coating of silicon nitride (29) can further be provided over the entire structure. The device can be used in radio-frquency or microwave amplifiers.</p> |
