摘要 |
<p>In a process for producing polycrystalline layers (3) having coarse crystalline structure, a thin interlayer (2) of amorphous material of the same type is deposited before the deposition of the polycrystalline layer (3) to avoid crystal structure effects originating from the substrate (1) and said interlayer (2) is then recrystallised (4) with the polycrystalline layer (3). As a result of the amorphous interlayer (2) any influence due to the fine crystalline structure of the substrate (1) is reliably avoided and the thin-layer technology can also be applied to polycrystalline silicon layers, which is of great benefit, in particular, in the production of solar cells. <IMAGE></p> |