发明名称 A HIGH PRECISION SEMICONDUCTOR RESISTOR DEVICE
摘要 A semiconductor device in which a conductor is formed on at least a resistance element that is formed by diffusing impurities into a polycrystalline silicon or semiconductor substrate, said conductor having a resistance smaller than that of said resistance element and being maintained at a predetermined potential. Such a constitution of the invention makes it possible to prevent the entrance of impurity ions or noise from the neighboring signal lines or from external units, that cause a change in the resistance of the resistance element, since there is formed a conductor having a predetermined potential. Therefore, the resistance of the resistance element can be stably maintained.
申请公布号 GB2262188(B) 申请公布日期 1993.09.15
申请号 GB19930001742 申请日期 1993.01.29
申请人 * SEIKO EPSON CORPORATION 发明人 YASUNARI * FURUYA;KAZUKO * MORIYA
分类号 H01L23/485;H01L23/58;H01L27/06;H01L27/08;(IPC1-7):H01C7/00 主分类号 H01L23/485
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