| 摘要 |
<p>A method of processing a polysilicon film formed on a single-crystal silicon substrate which can remove the polysilicon film with good selectivity in a fabrication process of semiconductor devices. First, a polysilicon film having an N-portion to be removed is formed on a single-crystal silicon substrate and then, the portion is selectively removed by the reactive ion etching using a Cl2 gas or mixed gases including a Cl2 gas. Preferably, N-impurity doping into the polysilicon film is performed by P or As ion-implantation with a dose of 1 x 10<1><5> cm<-><2> or more. A Cl2 gas, mixed gases of Cl2 and BCl3, mixed gases of Cl2 and HBr, mixed gases of Cl2 and BBr3, and mixed gases of Cl2 and SiCl4 are preferably used. <IMAGE></p> |
