| 摘要 |
A semiconductor memory device for storing data includes a plurality of cells (4) aligned horizontally and vertically; first bit lines (BL) connected to cells occurring in odd number locations of vertically aligned cells; second bit lines (BL#) connected to cells occurring in the even number locations of the vertically aligned cells; writing circuits (2); a precharge circuit (6); and, a writing control circuit (1). The writing circuit (2) simultaneously charges one of the bit lines to a predetermined voltage and maintains the other of the bit lines at a precharge voltage level. The write circuit control means (1) controls which of the bit lines is to be charged to the predetermined voltage level and which of the bit lines is to be maintained at the precharge voltage level, whereby common data is written to all memory cells (4) in a row when a word signal is activated on a word line connected to the row.
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