发明名称 Photoelectric converter with plural regions
摘要 A photoelectric converter of semiconductor transistor comprises two semiconductor regions of same electroconductive type and a semiconductor region of opposite electroconductive type to that of the two semiconductor regions. The semiconductor region of opposite electroconductive type is irradiated with a light. An amplified power is output from at least one of the two semiconductor regions of same electroconductive type. The semiconductor region of the opposite electroconductive type comprises a semiconductor region that accumulates a charge generated by light input and a semiconductor region acting as a control electrode region for the semiconductor transistor.
申请公布号 US5245203(A) 申请公布日期 1993.09.14
申请号 US19920860121 申请日期 1992.03.31
申请人 CANON KABUSHIKI KAISHA 发明人 MORISHITA, MASAKAZU;KIKUCHI, SHIN
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
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