发明名称 |
Photoelectric converter with plural regions |
摘要 |
A photoelectric converter of semiconductor transistor comprises two semiconductor regions of same electroconductive type and a semiconductor region of opposite electroconductive type to that of the two semiconductor regions. The semiconductor region of opposite electroconductive type is irradiated with a light. An amplified power is output from at least one of the two semiconductor regions of same electroconductive type. The semiconductor region of the opposite electroconductive type comprises a semiconductor region that accumulates a charge generated by light input and a semiconductor region acting as a control electrode region for the semiconductor transistor.
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申请公布号 |
US5245203(A) |
申请公布日期 |
1993.09.14 |
申请号 |
US19920860121 |
申请日期 |
1992.03.31 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MORISHITA, MASAKAZU;KIKUCHI, SHIN |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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