发明名称 |
MONOLITHIC OVERVOLTAGE PROTECTION DEVICE |
摘要 |
A protection device against overvoltages liable to occur between two supply terminals (A, B) comprises between the supply terminals, an avalanche triggered thyristor (6) having a determined break-over voltage (VBO) This system further comprises a zener diode (4) in parallel and reversely connected with the thyristor; the diode is selected so that its avalanche voltage (VBR) is lower than the break-over voltage of the thyristor and gets higher only for overvoltages having a higher duration or amplitude than a predetermined threshold.
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申请公布号 |
US5245499(A) |
申请公布日期 |
1993.09.14 |
申请号 |
US19910728226 |
申请日期 |
1991.07.12 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.A. |
发明人 |
SENES, ALBERT |
分类号 |
H01L27/06;H01L21/822;H01L27/02;H01L29/87;H02H9/04 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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