发明名称 MONOLITHIC OVERVOLTAGE PROTECTION DEVICE
摘要 A protection device against overvoltages liable to occur between two supply terminals (A, B) comprises between the supply terminals, an avalanche triggered thyristor (6) having a determined break-over voltage (VBO) This system further comprises a zener diode (4) in parallel and reversely connected with the thyristor; the diode is selected so that its avalanche voltage (VBR) is lower than the break-over voltage of the thyristor and gets higher only for overvoltages having a higher duration or amplitude than a predetermined threshold.
申请公布号 US5245499(A) 申请公布日期 1993.09.14
申请号 US19910728226 申请日期 1991.07.12
申请人 SGS-THOMSON MICROELECTRONICS S.A. 发明人 SENES, ALBERT
分类号 H01L27/06;H01L21/822;H01L27/02;H01L29/87;H02H9/04 主分类号 H01L27/06
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