发明名称 Capacitive type semiconductor accelerometer
摘要 A capacitive type semiconductor accelerometer has an intermediate silicon plate of n type conductivity including a movable electrode constituting a pendulum mass formed within the intermediate silicon plate and supported thereby via a beam so as to permit movement in a direction perpendicular to its plane. A first conductive island is formed within the intermediate plate and is immovably supported thereby via a first insulating leg so as to be isolated therefrom, and an upper glass plate is anodic bonded to the intermediate silicon plate. A first stationary electrode is formed on the upper glass plate at the position facing one face of the movable electrode with a predetermined gap. A lower glass plate is anodic bonded to the intermediate silicon plate and a second stationary electrode is formed on the lower glass plate at the position facing the other face of the movable electrode with a predetermined gap. First, second and third pads are disposed in common on the lower glass plate at the outside of the intermediate silicon plate, the first pad being electrically connected to the first stationary electrode via a first thin film lead formed on the lower glass plate and the first conductive island, the second pad being electrically connected to the movable electrode via a second thin film lead formed on the lower glass plate and the intermediate silicon plate and the third pad being electrically connected to the second stationary electrode via a third thin film lead formed on the lower glass plate.
申请公布号 US5243861(A) 申请公布日期 1993.09.14
申请号 US19910755838 申请日期 1991.09.06
申请人 HITACHI, LTD.;HITACHI AUTOMOTIVE ENGINEERING CO., LTD. 发明人 KLOECK, BENJAMIN;SUZUKI, SEIKO;TSUCHITANI, SHIGEKI;MIKI, MASAYUKI;MATSUMOTO, MASAHIRO;SATO, KAZUO;KOIDE, AKIRA;ICHIKAWA, NORIO;KAWAI, YUKIKO;EBINE, HIROMICHI
分类号 B81B3/00;G01P15/08;G01P15/125 主分类号 B81B3/00
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