DEVICE FOR THE PROTECTION AGAINST BREAKDOWN OF AN N+ TYPE DIFFUSED REGION INSERTED IN VERTICAL-TYPE SEMICONDUCTOR INTEGRATED POWER STRUCTURE,申请号US19900605448-传众专利搜索

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发明名称	DEVICE FOR THE PROTECTION AGAINST BREAKDOWN OF AN N+ TYPE DIFFUSED REGION INSERTED IN VERTICAL-TYPE SEMICONDUCTOR INTEGRATED POWER STRUCTURE
摘要
申请公布号	US5245211(A)	申请公布日期	1993.09.14
申请号	US19900605448	申请日期	1990.10.30
申请人	SGS-THOMSON MICROELECTRONICS S.R.L.	发明人	PAPARO, MARIO;PALARA, SERGIO
分类号	H01L29/74;H01L21/822;H01L27/02;H01L27/04	主分类号	H01L29/74
代理机构		代理人
主权项
地址

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