| 摘要 |
For providing different conductivity type contact electrodes being in contact with different conductivity type semiconductor regions formed in a semiconductor substrate, after an insulating film is formed on the semiconductor substrate, it is selectively etched down to one conductivity type semiconductor region to provide a first contact hole therein. One conductivity type doped polysilicon layer is deposited over the substrate surface to fill the first contact hole therewith. Thereafter, the one conductivity type doped polysilicon layer and the insulating film are selectively removed down to an opposite conductivity type semiconductor region to provide a second contact hole therein. An opposite conductivity type doped polysilicon layer is deposited over the substrate surface to fill the second contact hole therewith. These polysilicon layers are then removed from the surface of the insulating film to provide first and second contact electrodes in the contact holes.
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