METHOD FOR PLANARIZED ISOLATION FOR CMOS DEVICES,申请号US19910785774-传众专利搜索

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发明名称	METHOD FOR PLANARIZED ISOLATION FOR CMOS DEVICES
摘要
申请公布号	US5244827(A)	申请公布日期	1993.09.14
申请号	US19910785774	申请日期	1991.10.31
申请人	SGS-THOMSON MICROELECTRONICS, INC.	发明人	DIXIT, GIRISH A.;CHEN, FUSEN E.;MILLER, ROBERT O.
分类号	H01L21/76;H01L21/762;H01L21/763;H01L27/08	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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