| 摘要 |
PURPOSE:To obtain a photodiode having high light receiving efficiency by forming the same conducting type low resistance layer on the surface layer of a high resistance semiconductor substrate, and forming a reverse conducting type diffused region having the same or slightly protruded as the low resistance layer thereat to form a PIN-junction. CONSTITUTION:P ion or the like is implanted onto the same conducting type low resistance shallow n<+>-type layer 2 as the surface layer of a high resistance n<->-type semiconductor substrate 1 thereon, and an n<+>-type channel stopper region 4 is inserted into the substrate 1 through the layer 2 at the peripheral edge. Then, to the layer 2 surround by the region 4 is diffused and formed a p<+>-type light receiving region 3 having the same depth as or slightly protruded into the layer 2, and a non- reflective coating film 6 is coated over the region 3 and the oxide film 11 formed on the exposed layer 2. Thereafter, aluminum surface electrodes 7 are mounted through the openings perforated at the region 4 and the film 6 at the region 3, and the ohmic back surface electrode 8 is mounted through the region 5 onto the back surface of the substrate 1. |
