DATA INPUT BUFFER OF SEMICONDUCTOR MEMORY APPARATUS

摘要

The data input buffer connected to a power supply voltage includes a conductive path connected between the power supply voltage and a predetermined level sensing node for adjusting the amount of current in accordance with a level of an input voltage, and an insulating gate field effect transistor having one end of a channel thereof connected to the conductive path, the other end of the channel thereof connected to a ground voltage and a gate thereof supplied with a voltage in accordance with the level of the power supply voltage, so that the variation of the power supply voltage does not affect an input trip level to secure the operational stability and reliability of the data input buffer.