发明名称 |
SUPERCONDUCTING TUNNEL JUNCTION ELEMENT |
摘要 |
PURPOSE:To obtain a high quality tunnel type Josephson junction element which can be operated at a high temperature without necessity of liquid helium by providing a diffused barrier layer made of Pt at least on one of a barrier and a first superconducting electrode or the barrier and a second superconducting electrode therebetween. CONSTITUTION:A lower Ba1-xKxBiO3 thin film 2 is deposited about 250nm thick on a substrate 1 made of an SrTiO3 in plane (100) in a sputtering device having three magnetron cathodes by using a Ba0.6K0.4BiO3 sintered target. Then, a BaBiO3 barrier layer 3 of about 0.13nm thick is deposited on the film 2 in the same device by using a BaBiO3 sintered target. Further, a Pt layer 4 of 5nm or less thick is deposited on the layer 3 by sputtering. Eventually, an upper Ba1-xKxBiO3 thin film 5 is deposited about 150nm thick on the layer 4. A superconducting tunnel junction element is formed by using these four laminated layer films.
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申请公布号 |
JPH05235424(A) |
申请公布日期 |
1993.09.10 |
申请号 |
JP19920036629 |
申请日期 |
1992.02.24 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
TANABE KEIICHI;KARIMOTO SHINICHI;ENOMOTO YOICHI;ASANO HIDEFUMI |
分类号 |
H01L39/22;(IPC1-7):H01L39/22 |
主分类号 |
H01L39/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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