| 摘要 |
<p>PURPOSE:To realize a film carrier semiconductor device as high in mounting density as a flip chip by a method wherein an OLB bump mount and OLB bumps which are formed on the OLB bump mount and which an ends of ILB leads are connected are provided. CONSTITUTION:A film carrier tape 1 provided with sprocket holes 6 used for transfer and positioning and a semiconductor chip 2 where a protrudent metal electrode bumps 7 are previously formed on electrode pads are provided. Inner lead bonding(ILB) leads 16 formed on the film carrier tape 1 and connected to the electrode bumps 7 and an outer lead bonding (OLB) bump mount, 17 where the semiconductor chip is mounted are provided. Furthermore, OLB bumps 18 which are formed on the OLB bump mount 17 and which an end of the ILB leads 16 are connected are provided. By this setup, a film carrier semiconductor device of this design can be enhanced in mounting density as high as a flip chip, retaining the merits of a film carrier semiconductor device.</p> |
