| 摘要 |
PURPOSE:To obtain a semiconductor package, which is low in heat resistance, is superior in heat dissipation characteristics and is superior in sealing properties, by a method wherein the ratio of the area of the joint of a high-heat conductive sealing number to the area of one main surface of an aluminum nitride substrate is set at a specified value. CONSTITUTION:A semiconductor element 3 is connected electrically an aluminium nitride multilayer board 21 having a wiring pattern 20 connected electrically with the element 3 and is connected electrically with the wiring pattern 20. A semiconductor package is provided with lead pins 6, which are formed on the other main surface of the main surfaces of the board 21 and are used as external terminals 5, and a high-heat conductive member 22, which is jointed on the main surface of the board 21 in such a way as to cover the element 3 and has a U-shaped section. The ratio of the area of the joint of the member 22 to the area of the main surface of the board 21 is set at 1 to 25% or higher to 1 to 80% or lower to constitute the package. By using this joint as a heat dissipation circuit, the heat resistance of the package is small and the heat dissipation characteristics of the package are also superior. |
