发明名称 EXPOSURE METHOD USING PROJECTION OPTICAL SYSTEM
摘要 PURPOSE:To use a positive-type resist when a hole pattern is formed by using a phase shift reticle by a method wherein a light flux which is passed near an optical axis is shielded out of light fluxes which are passed through a Fourier transform face with reference to a reticle pattern. CONSTITUTION:In a phase shift reticle R, a phase shift transmission part (b) is formed in a substratum transmission part (a). A light-shielding plate FL is installed near a pupil face EP as a Fourier transform corresponding face with reference to a reticle pattern in a projection optical system PL; a beam of light near an optical axis is cut off. Consequently, regarding an amplitude distribution in the pupil face EP, an amplitude near the optical axis AX is removed completely. A negative amplitude distribution having a very small width as the inverse Fourier transform of the amplitude distribution on the pupil face EP is generated on the face of a wafer W. Since the intensity of a projection image is the square of the absolute value of an amplitude distribution, a very small and bright pattern is formed. Thereby, a very fine hole pattern can be formed by using a positive-type resist.
申请公布号 JPH05234846(A) 申请公布日期 1993.09.10
申请号 JP19920036347 申请日期 1992.02.24
申请人 NIKON CORP 发明人 SHIRAISHI NAOMASA
分类号 G03F7/20;H01L21/027;H01L21/30;(IPC1-7):H01L21/027 主分类号 G03F7/20
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