MANUFACTURE OF FIN STRUCTURE

摘要

PURPOSE:To reduce the bending of fins created during the production process for a fine fin structural body such as a fin type accumulation electrode of DRAM. CONSTITUTION:A film 2 of the first material such as at least one layer of polycrystalline silicon or amorphous silicon is formed by inserting a film 3 of the second material such as silicon oxide having a higher etching rate than the first material. A process of removing part of the film 3 of the second material by dry etching using water vapor and HF vapor for example and a process of removing at least once a liquid 4 produced by the dry etching are provided, and a process of removing the film 3 of the second material in several steps is also adopted.