| 摘要 |
PURPOSE:To obtain a chalcopyrite type compound thin film in which excess content of group III element can be formed by forming a film made of silver or copper on a substrate and forming a film made of In2Se3 or In2S3 thereon. CONSTITUTION:An Mo film 2 as a metal electrode is formed on a glass board 1, a Cu film 3 or an Ag film 3 is formed on the board by setting a board temperature to 400 deg.C and sputtering using a Cu target or an Ag target, and an In2Se3 film 4 or an In2S3 film 4 is formed thereon at the same board temperature by sputtering using an In2Se3 target or an In2S3 target. Thus, a CuInSe2 thin film 5, an AgInSe2 thin film 5, a CuInS2 thin film 5 or an AgInS2 thin film 5 having a chalcopyrite structure and containing excess In is obtained. |
