| 摘要 |
PURPOSE:To form an arbitrary pattern in a phase shift method. CONSTITUTION:Rectangular, triangular or pentagonal transparent parts 13 whose size is below dimensions regulated by the wavelength of light for exposure and rectangular, triangular or pentagonal phase shift parts 12 whose size is similarly restricted are alternately arranged in longitudinal and transverse directions to form a light shielding part. By this method, an arbitrary pattern can be formed and a mask for producing a semiconductor device having high resolution and a large depth of a focus and capable of utilizing mask layout data designed as the pattern of a transmitting part or the pattern of a light shielding part is obtd. |
