| 摘要 |
<p>PURPOSE:To prevent a substrate from melting and being damaged and impurity elements from dispersing by providing a shielding layer in the upper part and under the active layer of a substrate. CONSTITUTION:A base layer 102 consisting of SiO2, a laser shielding layer 103 consisting of an amorphous Si and an insulating preventive layer 104 made of SiNx are formed in sequence on a supporting base body 101 made of a barium borosilicate glass. On top of them, source drain layers made of MoSi105 and n<+>poly-Si106, respectively, and a channel forming active layer made of poly-Si107 irradiated with a laser beam are formed. Laser-irradiation at the time of active layer formation is performed after active layer deposition and before patterning. After that, a gate insulating layer 108 and a gate electrode 109 are formed to form a thin film transistor. So, the laser beam which goes through a to-be- annealed layer is absorbed or reflected on the shielding layer, never reaching a substrate to serve as the supporting base body, or weakened before reaching. As a result, the substrate is never directly heated by the laser beam.</p> |
