| 摘要 |
<p>PURPOSE:To reduce optical loss in a phototransmitting resin by optically coupling photoemission diode and a photodiode via a phototransmitting resin of short length and by coating the surface of a means to control recovery of the photoemission diode, the photodiode, a MOSFET, and a relay with a photoshielding resin. CONSTITUTION:A photoemission diode consists of a P-type GaAs semiconductor layer 1 and an n-type GaAs semiconductor layer 2. A photodiode consists of an n-type single crystal silicon island 5 supported by a polycrystalline silicon 3 and dielectrically isolated on it via a silicon oxide film 4, a P-type silicon semiconductor layer 6, and a silicon oxide film 7 as the reflection-proof film. The photoemission diode, the photodiode, the MOSFET, and a control circuit are all coated with a photoshielding resin 14. The photoemission diode and the photodiode are optically coupled via a photoshielding resin 16 of about several 10mum length to shorten distance, so that the efficiency of light incidence into the photodiode is improved with optical loss reduced in the phototransmitting resin.</p> |
