| 摘要 |
PURPOSE:To obtain a highly integrated high-performance DRAM cell from a more simplified production process in the manufacture of the DRAM cell provided with an information storing capacitor located directly below a transfer transistor by a wafer adhering technique. CONSTITUTION:On a p-type silicon semiconductor substrate, an information storing capacitor comprising a storage electrode, a capacitor insulating film 30 and a cell plate electrode film 31 is formed via insulating film 25 made of Si3N4. And N-type silicon semiconductor substrate 32 is adhered to a cell plate electrode film 31 flattened by polishing, and the exposed surface of a p-type silicon semiconductor substrate is polished by using an insulating film 24 for element separation. And an information staring transistor where a n-type source region 35 came into contact with the storage electrode is formed in the p-type silicon semiconductor substrate. |
