| 摘要 |
PURPOSE:To shorten turn-around time as far as possible as well as make the size of a cell small as far as possible. CONSTITUTION:This manufacturing method consists of following processes, semiconductor substrate 1, a process of forming a resist film 3 on this first layer, and forming a resist pattern by patterning this resist film, and patterning the first layer with this formed resist pattern as a mask, a process of forming a second layer on the surface after removal of the resist pattern, a process of leaving the second layer on the sidewall of the patterned first layer by etching back this second layer, a process of forming gate oxide film 5 by oxidizing the surface after removal of the patterned first layer and a process of etching back the layer of an electrode material until the second layer appears after stacking the layer 6 of the electrode material until the second layer is buried. |
