| 摘要 |
PURPOSE:To provide a semiconductor substrate, which can make a compound semiconductor element excellent in property while effectively preventing the influences of short channel effect, soft error by an alpha ray, or side gate effect, and its manufacture, concerning the semiconductor substrate, which has SOI structure, and its manufacture. CONSTITUTION:This is constituted so as to form a GaAs layer 13 by bringing a GaAs substrate 12 into contact with the top of a sapphire substrate 10, and heating the sapphire substrate 10 and the GaAs substrate 12 at a temperature of 200 deg.C or more, and bonding the GaAs substrate 12 onto the sapphire substrate 10, and thinning the GaAs substrate 12 into a specified thickness.
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