| 摘要 |
PURPOSE:To provide a manufacture of a BiMOS semiconductor device capable of forming a silicide layer only in a required part without deteriorating high-frequency characteristics of a bipolar transistor and sacrificing the degree of integration and controlling a silicide reaction. CONSTITUTION:A manufacture of a BiMOS semiconductor device comprises the steps of an ion implantation to a contact region through a contact hole by a self-alignment, forming an oxide film 10 on the surface of the contact hole by a CVD method, a thermal treatment for activating an impurity of the contact region, forming an opening 143 for forming a Schottky diode, forming a high-melting metal film, a silicide reaction of the high-melting metal film with a substrate, removing the high-melting metal film unreacted, and removing the oxide film 10 on the surface of the contact hole. |
