| 摘要 |
PURPOSE:To prevent an influence on a rewrite operation after a readout operation by a method wherein a boosting circuit based on a signal generated at the start of a sense operation is installed inside a selection-signal generation circuit which generates the selection signal of a memory cell array. CONSTITUTION:A reference selection signal S1 which is generated by an S1 sustain circuit 9 and which is boosted by a boosting circuit 10 is boosted, at two stages, by means of a boosting circuit 12 which receives a sense signal generated at the start of a sense operation; it is output to a local S1 generation circuit 11. A memory cell array selection signal S11 at a boosting level, generated from the circuit 11 which has received the boosted signal S1 is output as a signal which has been boosted up to a level which is higher than the sum of a power-supply voltage Vcc and a threshold voltage Vth. As a result, even when the level is lowered by a capacity coupling operation to a bit line pair at the start of the sense operation, it does not become lower than the sum of the voltages Vcc, Vth. Thereby, it is possible to write a piece of correct data in a rewrite operation after a readout operation. |
