| 摘要 |
The solid image sensor has the same voltage junction as that from DC bias of OG (4) by concentration-controlling implanting on the OG area (14) not using gate. The solid image sensor includes BCCD area (17) horizontally transferring the transferred image signal electric charge through VCCD, FD area (13) temperally storing the transferred charge to sensor, RG (15) and RD (16) turning the sensored charge in to the reverse direction, junction (18) having the limited voltage between BCCD (17) and FD (13) by implanting.
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