| 发明名称 |
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| 摘要 |
A multiplicity of microwave semiconductor components can be produced by coating a surface of a semiconductor material body with a thin heat dissipation layer, then masking certain areas of the heat sink layer and coating the unmasked areas of the heat sink layer to form a carrier layer. Extensive parts of the semiconductor material body are then removed, thereby producing a multiplicity of mesa-structured diodes, at least one of which is in each case situated in that part of the semiconductor material body which is associated in each case with a masked area of the heat sink layer. Consequently, each mesa-structured diode has, or groups of mesa-structured diodes have in each case, a thin heat sink layer on one side, the mesa-structured diodes being mounted on a carrier layer to enable them to be handled subsequently. There are electrodes on the mesa-structured diodes to produce the connections. The individual diodes or diode groups are then separated from the carrier layer so that individual diodes or individual groups of diodes are obtained. |
| 申请公布号 |
DE3243307(C2) |
申请公布日期 |
1993.09.09 |
| 申请号 |
DE19823243307 |
申请日期 |
1982.11.23 |
| 申请人 |
RAYTHEON CO., LEXINGTON, MASS., US |
发明人 |
ADLERSTEIN, MICHAEL G., WELLESLEY, MASS., US |
| 分类号 |
H01L21/78;H01L23/043;H01L25/07 |
主分类号 |
H01L21/78 |
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