| 摘要 |
The self-LDD cell manufacturing method includes the steps of forming a well of a first conductivity on a silicon substrate, forming a bulging silicon line by etching a predetermined region via a masking and etching processes, forming a field oxide layer and then a gate oxide layer, forming a trench by etching the silicon substrate of a portion having a high-density junction region of a second conductivity, forming a low-density junction region of the first conductivity by implanting an impurity of the first conductivity in the trench via a tilt and rotation methods, simultaneously forming a gate on the field oxide layer, a sidewall gate on the step of the bulging silicon line and a sidewall polysilicon layer on the sidewall of the trench via depositing, masking and anisotropic etching, forming a high-density source/drain junction region of the second conductivity, forming an insulating layer and then a buried contact, forming a storage electrode connected to the high-density source/drain junction region of the second conductivity, and sequentially forming a dielectric film and then a plate electrode.
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