| 摘要 |
A semiconductor element is formed in a semiconductor substrate (11). An electrode wiring pattern (15B, 15E) which is connected to the active region and contains aluminum as the main component is formed on the main surface of said semiconductor substrate (11). A metal bump (18B, 18E) is formed on the electrode wiring pattern (15B, 15E). The metal bump (18B, 18E) contains zinc of 1 to 10 % in mass percentage in addition to at least one element selected from a group consisting of tin, lead and aluminum. |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP |
发明人 |
HIDESHIMA, MAKOTO INTELLECTUAL PROPERTY DIVISI, MINATO-KU TOKYO 105, JP;TSUNODA, TETSUJIRO INTELLECTUAL PROPERTY DIV, MINATO-KU TOKYO 105, JP;KOJIMA, SHINJIRO INTELLECTUAL PROPERTY DIVI, MINATO-KU TOKYO 105, JP;ANDO, MASARU INTELLECTUAL PROPERTY DIVISI, MINATO-KU TOKYO 105, JP |
