| 摘要 |
PURPOSE:To make a MOS integrated circuit of a high integration by giving a rotating application of a liquid-type material having a mask effect on a silicon nitriding film and also by giving an etching after removing the applied material from the top section of a polycrystalline silicon gate electrode. CONSTITUTION:A field oxidation film 12, a gate oxidation film 13, a polycrystalline silicon gate 14 and an oxidation film 15 are formed on a P-type silicon substrate 11. Then a silicon nitriding film 16 is grown on the said substrate, and after giving a rotating application of a photo resist 17, an etching is given to the resist until the silicon nitriding film 16 is exposed. Then this is used as a mask and an oxidation film 19 is exposed by etching. After giving a heat oxidation and an etching to the silicon nitriding film, gate oxidation films 22 and 22' are etched, source/drain diffusion layers 24 and 24' are formed by diffusion, wiring metal layers 25 and 25' are formed and the manufacture of an element is completed. |
