发明名称 STACKED CAPACITOR AND MANUFACTURING METHOD THEREOF
摘要 The method is for increasing the capacitance of the stacked capacitor. The capacitor comprises a tunnel type electrode for charge storage, a dielectric layer, 1st and 2nd electrodes for charge storage, and a plate electrode formed on the dielectric layer. The surface of the tunnel type electrode is surrounded by the dielectric layer and the plate electrode.
申请公布号 KR930008583(B1) 申请公布日期 1993.09.09
申请号 KR19900017095 申请日期 1990.10.25
申请人 HYUNDAI EELCTRONICS CO., LTD. 发明人 LEE, JONG - HWAN;PARK, CHOL - SU
分类号 H01L27/10;H01L21/02;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L27/10
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