发明名称 |
STACKED CAPACITOR AND MANUFACTURING METHOD THEREOF |
摘要 |
The method is for increasing the capacitance of the stacked capacitor. The capacitor comprises a tunnel type electrode for charge storage, a dielectric layer, 1st and 2nd electrodes for charge storage, and a plate electrode formed on the dielectric layer. The surface of the tunnel type electrode is surrounded by the dielectric layer and the plate electrode.
|
申请公布号 |
KR930008583(B1) |
申请公布日期 |
1993.09.09 |
申请号 |
KR19900017095 |
申请日期 |
1990.10.25 |
申请人 |
HYUNDAI EELCTRONICS CO., LTD. |
发明人 |
LEE, JONG - HWAN;PARK, CHOL - SU |
分类号 |
H01L27/10;H01L21/02;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|